All types of Transistor and Mosfet are available on Nex Electronic at Best Price.
Transistors are basically classified into two types; they are Bipolar Junction Transistors (BJT) and Field Effect Transistors (FET). The BJTs are again classified into NPN and PNP transistors.
Nex Electronic: Simple Solution For Complex Connections
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Product description Below2N3055 NPN POWER Transistor (Pack of 5)
Original price was: ₹690.00.₹390.00Current price is: ₹390.00.KSA1220 PNP Transistor Amplifier
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1.High Frequency PNP Transistor.
2.DC Current Gain (hFE), typically 150.
3.Transition Frequency is 175 MHz.
4.Continuous Collector current (IC) is 1.2A.KSA1220 PNP Transistor Amplifier (Pack of 5)
Original price was: ₹515.00.₹389.00Current price is: ₹389.00.Nex Electronic: Simple Solution For Complex Connections
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IRFB7545 MOSFETType of Transistor: MOSFET
Type Designator: IRFB7545
Type of Control Channel: N -Channel
Maximum Drain-Source Voltage: 60 V
Maximum Gate-Source Voltage: 20 V
Maximum Gate-Threshold Voltage: 3.7 V
Maximum Drain Current: 95 A
Drain-Source Capacitance: 370 pF
Maximum Operating Junction Temperature: 175 ?C
Rise Time: 72 nS
Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Maximum Power Dissipation: 125 W
Package: TO220ABApplication
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC invertersIRFB7545 HEXFET N-CHANNEL POWER MOSFET-95A (Original) (Pack of 5)
Original price was: ₹515.00.₹336.00Current price is: ₹336.00.Nex Electronic: Simple Solution For Complex Connections
Drain to source voltage Vds is 100V
Gate to source voltage is ?20V
On Resistance Rds(on) of 44mohm at Vgs of 10V
Power dissipation Pd of 130W at 25?C
Features:
Gate to source voltage is ?20V
On-Resistance Rds(on) of 8mohm at Vgs of 10V
Power dissipation (Pd) of 130W at 25?C
Continuous drain current (Id) of 110A at Vgs 10V and 25?C
Operating junction temperature range from -55?C to 175?C
Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.IRF3205 Power Mosfet (Original) (Pack of 5)
Original price was: ₹473.00.₹305.00Current price is: ₹305.00.- IRF530 Power MOSFET
- Drain to source voltage Vds is 55V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 60mohm at Vgs of -10V
- Power dissipation Pd of 110W at 25°C
- Continuous drain current Id of -31A at Vgs -10V and 25°C
- Junction temperature range from -55°C to 175°C
IRF530 Power MOSFET (Pack of 5)
Original price was: ₹368.00.₹294.00Current price is: ₹294.00. Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-FreeIRF2807 Power MOSFET (Pack of 5)
Original price was: ₹473.00.₹294.00Current price is: ₹294.00.Nex Electronic: Simple Solution For Complex Connections
QUICK VIEW:IRF3710 MOSFET
Type of Transistor: MOSFET
Type Designator: IRF3710
Type of Control Channel: N -Channel
Maximum Drain-Source Voltage: 100 V
Maximum Gate-Source Voltage: 10 V
Maximum Drain Current: 57 A
Maximum Operating Junction Temperature: 150 ?C
Maximum Drain-Source On-State Resistance: 0.025 Ohm
Total Gate Charge: 86.7 nC
Maximum Power Dissipation: 200 W
Package: TO220ABIRF3710 MOSFET – 100V 57A N-Channel HEXFET Power (Original) (Pack of 5)
Original price was: ₹410.00.₹268.00Current price is: ₹268.00.- IRF840 N-channel Power MOSFET
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 175°C Operating temperature
IRF840 Power MOSFET N-channel 8A 500V (Pack of 5)
Original price was: ₹368.00.₹249.00Current price is: ₹249.00. Nex Electronic: Simple Solution For Complex Connections
QUICK VIEW:- Type Designator: STP80NF10
- Marking Code: P80NF10
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 80 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 135 nC
- Rise Time (tr): 80 nS
- Drain-Source Capacitance (Cd): 700 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
P80NF10 MOSFET (Pack of 5)
Original price was: ₹515.00.₹236.00Current price is: ₹236.00.