The IRF5305PBF is 55V single P channel MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
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IRF530 Power MOSFET
-11%
IRF530 Power MOSFET
- Drain to source voltage Vds is 55V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 60mohm at Vgs of -10V
- Power dissipation Pd of 110W at 25°C
- Continuous drain current Id of -31A at Vgs -10V and 25°C
- Junction temperature range from -55°C to 175°C
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