P80NF10 N-channel 100V – 0.019 Ohm – 80A Power MOSFET Transistor.
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
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P80NF10 MOSFET
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Nex Electronic: Simple Solution For Complex Connections
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- Type Designator: STP80NF10
- Marking Code: P80NF10
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 300 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 80 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 135 nC
- Rise Time (tr): 80 nS
- Drain-Source Capacitance (Cd): 700 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
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