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IRF1010E N-Channel Power MOSFET

180.00 80.00

IRF1010E N-Channel Power MOSFET
Quick View:
1.Fully avalanche rated.
2.Fast switching.
3.Fifth generation HEXFET.
4.Maximum voltage across DRAIN and SOURCE: 60V.

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2 in stock

NexElectronics Benefits

NE benefit

SKU: T0018 Category:

Fully avalanche rated
Fast switching
Fifth generation HEXFET
Maximum voltage across DRAIN and SOURCE: 60V
Maximum continuous current allowed trough DRAIN: 81A
Maximum pulsed DRAIN current: 330A
Maximum voltage across GATE and SOURCE:20 V
Maximum operating Temperature: 175?C
Maximum power dissipation: 170Watt


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