Fully avalanche rated
Fast switching
Fifth generation HEXFET
Maximum voltage across DRAIN and SOURCE: 60V
Maximum continuous current allowed trough DRAIN: 81A
Maximum pulsed DRAIN current: 330A
Maximum voltage across GATE and SOURCE:20 V
Maximum operating Temperature: 175?C
Maximum power dissipation: 170Watt
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IRF1010E N-Channel Power MOSFET
-56%
IRF1010E N-Channel Power MOSFET
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1.Fully avalanche rated.
2.Fast switching.
3.Fifth generation HEXFET.
4.Maximum voltage across DRAIN and SOURCE: 60V.
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