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IRFB7545 HEXFET N-CHANNEL POWER MOSFET-95A (Original) (Pack of 5)

490.00 320.00

Nex Electronic: Simple Solution For Complex Connections

Type of Transistor: MOSFET
Type Designator: IRFB7545
Type of Control Channel: N -Channel
Maximum Drain-Source Voltage: 60 V
Maximum Gate-Source Voltage: 20 V
Maximum Gate-Threshold Voltage: 3.7 V
Maximum Drain Current: 95 A
Drain-Source Capacitance: 370 pF
Maximum Operating Junction Temperature: 175 ?C
Rise Time: 72 nS
Maximum Drain-Source On-State Resistance: 0.0059 Ohm
Maximum Power Dissipation: 125 W
Package: TO220AB

Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters

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52 in stock

NexElectronics Benefits

NE benefit

SKU: TR1125 Category:

The IRFB7545PBF is a HEXFET? N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.


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