Nex Electronic: Simple Solution For Complex Connections
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IRF3710 MOSFET

Type of Transistor: MOSFET
Type Designator: IRF3710
Type of Control Channel: N -Channel
Maximum Drain-Source Voltage: 100 V
Maximum Gate-Source Voltage: 10 V
Maximum Drain Current: 57 A
Maximum Operating Junction Temperature: 150 ?C
Maximum Drain-Source On-State Resistance: 0.025 Ohm
Total Gate Charge: 86.7 nC
Maximum Power Dissipation: 200 W
Package: TO220AB

Nex Electronic: Simple Solution For Complex Connections

Drain to source voltage Vds is 100V
Gate to source voltage is ?20V
On Resistance Rds(on) of 44mohm at Vgs of 10V
Power dissipation Pd of 130W at 25?C
Features:
Gate to source voltage is ?20V
On-Resistance Rds(on) of 8mohm at Vgs of 10V
Power dissipation (Pd) of 130W at 25?C
Continuous drain current (Id) of 110A at Vgs 10V and 25?C
Operating junction temperature range from -55?C to 175?C
Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.

Nex Electronic: Simple Solution For Complex Connections
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Product description Below
Specifications:-
Symbol Parameter Min Max Unit
VCC Supply Voltage
41 V
VI Amplifier input voltage
VCC 0.3 V
VO Collector output voltage
41 V
IO Collector output current
250 mA
Lead temperature 1,6 mm
260 ?C
Tstg Storage temperature range -65 150 ?C

Nex Electronic: Simple Solution For Complex Connections
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Product description Below
MJE 13007 POWER TRANSISTOR CDIL Features

Collector?Emitter Sustaining Voltage : 400 V.
Collector?Emitter Breakdown Voltage : 700 V.
Emitter?Base Voltage : 9.0 V.
Base Current ? Continuous : 8A.
Operating and Storage Temperature : ? 65 to 150 ?C.
Reverse Bias SOA with Inductive Loads @ TC = 100?C
700 V Blocking Capability
SOA and Switching Applications Information