Nex Electronic: Simple Solution For Complex Connections
QUICK VIEW:

• Type Designator: STP80NF10
• Marking Code: P80NF10
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 300 W
• Maximum Drain-Source Voltage |Vds|: 100 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 80 A
• Maximum Junction Temperature (Tj): 175 °C
• Total Gate Charge (Qg): 135 nC
• Rise Time (tr): 80 nS
• Drain-Source Capacitance (Cd): 700 pF
• Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm