Nex Electronic: Simple Solution For Complex Connections
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Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 18A
Drain-Source Resistance (Rds On) 0.15Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 70 nC
Operating Temperature Range -55 – 150?C
Power Dissipation (Pd) 150W
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Original price was: ₹305.00.₹173.00Current price is: ₹173.00.
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IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W.
Features:-
? Dynamic dV/dt rating
? Repetitive avalanche rated
? Fast switching
? Ease of paralleling
? Simple drive requirements
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