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IRF3710 MOSFET
Type of Transistor: MOSFET
Type Designator: IRF3710
Type of Control Channel: N -Channel
Maximum Drain-Source Voltage: 100 V
Maximum Gate-Source Voltage: 10 V
Maximum Drain Current: 57 A
Maximum Operating Junction Temperature: 150 ?C
Maximum Drain-Source On-State Resistance: 0.025 Ohm
Total Gate Charge: 86.7 nC
Maximum Power Dissipation: 200 W
Package: TO220AB
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Original price was: ₹410.00.₹268.00Current price is: ₹268.00.
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IRF3710 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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