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IRF640 MOSFET – 200V 18A N-Channel Power MOSFET (Pack of 5)

90.00 35.00

Nex Electronic: Simple Solution For Complex Connections
Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 18A
Drain-Source Resistance (Rds On) 0.15Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 70 nC
Operating Temperature Range -55 – 150?C
Power Dissipation (Pd) 150W

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COD Available You can pay at the time of delivery

115 in stock

NexElectronics Benefits

NE benefit


IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W.


? Dynamic dV/dt rating

? Repetitive avalanche rated

? Fast switching

? Ease of paralleling

? Simple drive requirements


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