IRF640 MOSFET – 200V 18A N-Channel Power MOSFET (Pack of 5)

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Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 18A
Drain-Source Resistance (Rds On) 0.15Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 70 nC
Operating Temperature Range -55 – 150?C
Power Dissipation (Pd) 150W

SKU: TR1128

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Original price was: ₹305.00.Current price is: ₹173.00.

50 in stock

50 in stock

Quantity
Price
<5
₹173.00
5 - 9
₹155.70
10 - 19
₹138.40
20 - 49
₹129.75
50+
₹121.10
× IRF640 MOSFET - 200V 18A N-Channel Power MOSFET (Pack of 5)
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Description

IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W.

Features:-

? Dynamic dV/dt rating

? Repetitive avalanche rated

? Fast switching

? Ease of paralleling

? Simple drive requirements

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