Processes and techniques required for the fabrication of experimental planar PNP silicon transistors have been developed and demonstrated as feasible. Processes involved include material preparation, antimony base diffusion, boron emitter diffusion, oxide masking, photoresist techniques, simultaneous gold metalizing of emitter and base regions, collector alloy contact, and basing bonding. This Product is known as 2SB688, 2SB688 PNP Bipolar Power Transistor, 2SB688 Power Transistor, B688, B688 PNP Planar Silicon Transistor, B688 Transistor,B688 Darlington Transistors, B688 PNP Bipolar Power Transistor, B688 Power Transistor, B688 Transistor

Features:

• High Current Capability
• High Power Dissipation
• Complementary to 2SD718