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2SB688 – B688 Silicon PNP Power Transistors

140.00 80.00
-43%

Features/Specs:

  • Model No: B688
  • Polarity/Channel Type: PNP
  • Describe: PNP Planar Silicon Transistor
  • Collector-Base Voltage: -120 V
  • Collector-Emitter Voltage: -120 V
  • Emitter Base Voltage: -5 V
  • Collector Current IC: -10 A
  • Base Current: -1 A
  • Collector Power Dissipation: (TC=25℃) PC 80 W
  • Junction Temperature: TJ 150 ℃
  • Storage Temperature Range TSTG: -40 ~ 150℃
  • Package: SC-65
Free Delivery Free delivery on orders over ₹699.00

COD Available You can pay at the time of delivery

12 in stock

NexElectronics Benefits

NE benefit

SKU: MF4574 Category:

Processes and techniques required for the fabrication of experimental planar PNP silicon transistors have been developed and demonstrated as feasible. Processes involved include material preparation, antimony base diffusion, boron emitter diffusion, oxide masking, photoresist techniques, simultaneous gold metalizing of emitter and base regions, collector alloy contact, and basing bonding. This Product is known as 2SB688, 2SB688 PNP Bipolar Power Transistor, 2SB688 Power Transistor, B688, B688 PNP Planar Silicon Transistor, B688 Transistor,B688 Darlington Transistors, B688 PNP Bipolar Power Transistor, B688 Power Transistor, B688 Transistor

Features:

  • High Current Capability
  • High Power Dissipation
  • Complementary to 2SD718

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